Method of processing a semiconductor wafer for controlling drive current
AssigneeAdvanced Micro Devices, Inc.
InventorsH. Jim Fulford, Jr., Derick Wristers
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Abstract
Transistor drive current is controlled by controllably varying light exposure across a semiconductor substrate wafer based on an integrated circuit parameter. Integrated circuit parameters upon which the light exposure is varied include gate oxide thickness, rapid temperature annealing (RTA) temperature, polyetch bias and the like.
Claims20
A method of controlling the spatial distribution of circuit performance across a semiconductor wafer during fabrication of an integrated circuit comprising:
- determining a spatial distribution of polysilicon etch bias on the semiconductor wafer;
- determining the effect of polysilicon etch bias on circuit performance;
- and
- exposing the semiconductor wafer to illumination in a photolithography operation, variably within the spatial distribution of polysilicon etch bias on the semiconductor wafer to counteract the effect of polysilicon bias variation.
A method of controlling the spatial distribution of circuit performance across a semiconductor wafer during fabrication of an integrated circuit comprising:
- determining a spatial distribution of rapid thermal anneal (RTA) temperature on the semiconductor wafer;
- determining the effect of RTA temperature on circuit performance;
- and
- exposing the semiconductor wafer to illumination, variably within the spatial distribution of RTA temperature on the semiconductor wafer to counteract the effect of RTA temperature variation.
Dependencies are inferred from the claim text.