Y10S 148/106
Masks, special
Y10S148/106 (Masks, special) appears on 204 US grants and 2 published applications in this corpus.
Search patents in Y10S- Granted patents
- 204
- Published applications
- 2
- Assignees
- 86
- Inventors
- 338
- Latest grant
- 22 Dec 2009
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 25 | 0 |
| 1977 | 15 | 0 |
| 1978 | 8 | 0 |
| 1979 | 7 | 0 |
| 1980 | 6 | 0 |
| 1981 | 7 | 0 |
| 1982 | 4 | 0 |
| 1983 | 1 | 0 |
| 1984 | 6 | 0 |
| 1985 | 1 | 0 |
| 1986 | 7 | 0 |
| 1987 | 6 | 0 |
| 1988 | 11 | 0 |
| 1989 | 8 | 0 |
| 1990 | 14 | 0 |
| 1991 | 4 | 0 |
| 1992 | 9 | 0 |
| 1993 | 9 | 0 |
| 1994 | 15 | 0 |
| 1995 | 9 | 0 |
| 1996 | 11 | 0 |
| 1997 | 7 | 0 |
| 1998 | 4 | 0 |
| 1999 | 4 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 1 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Mask with hydrophobic surface22 Dec 2009US 7,635,652 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Process for forming trenches and contacts during the formation of a semiconductor memory device16 Jul 2002US 6,420,257 B2Micron Technology, Inc.
- Method for improving the thermal conductivity of metal lines in integrated circuits9 Jan 2001US 6,171,956 B2Worldwide Semiconductor Manufacturing Corp.
- Process for forming trenches and contacts during the formation of a semiconductor memory device26 Dec 2000US 6,165,889 AMicron Technology, Inc.
- Advanced technique to grow single crystal films on amorphous and/or non-single crystal surfaces15 Aug 2000US 6,103,019 A
Most cited
By later US patents
- Method for reducing, by a factor or 2.sup.-N, the minimum masking pitch of a photolithographic process1,059US 5,328,810 AMicron Technology, Inc. · 1994
- Method of making aluminum gate self-aligned FET by selective beam annealing through reflective and antireflective coatings128US 4,468,855 AFujitsu Limited · 1984
- Method for producing via holes in polymer dielectrics127US 4,764,485 AGeneral Electric Company · 1988
- Processing techniques for achieving production-worthy, low dielectric, low dielectric, low interconnect resistance and high performance IC113US 5,679,608 AAdvanced Micro Devices, Inc. · 1997
- Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS103US 5,550,405 AAdvanced Micro Devices, Inc. · 1996