Y10S 148/034
Diffusion of boron or silicon
Y10S148/034 (Diffusion of boron or silicon) appears on 22 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 22
- Published applications
- 0
- Assignees
- 18
- Inventors
- 55
- Latest grant
- 20 Jul 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 5 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of producing a bipolar transistor20 Jul 1999US 5,925,574 ASeiko Instruments Inc.
- Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device7 Oct 1997US 5,674,777 ANational Science Council
- Method of manufacturing CMOS device18 Mar 1997US 5,612,245 AKabushiki Kaisha Toshiba
- Method of doping, semiconductor device, and method of fabricating semiconductor device17 Sep 1996US 5,557,141 ASanyo Electric Co., Ltd.
- Method of manufacturing a CMOS semiconductor device7 Nov 1995US 5,464,789 AKabushiki Kaisha Toshiba
No published applications in this class yet.
Most cited
By later US patents
- Method of producing a bipolar transistor70US 5,925,574 ASeiko Instruments Inc. · 1999
- Method for producing CMOS transistor64US 5,366,922 ASeiko Instruments Inc. · 1994
- Method and structure for inhibiting dopant out-diffusion40US 4,640,004 AFairchild Camera and Instrument Corporation · 1987
- Germanium implant for use with ultra-shallow junctions36US 5,401,674 AAdvanced Micro Devices, Inc. · 1995
- Amorphous silicon thin film transistor and method of manufacturing the same35US 4,916,090 ANippon Precision Circuits Inc. · 1990