Y10S 148/113
Nitrides of boron or aluminum or gallium
Y10S148/113 (Nitrides of boron or aluminum or gallium) appears on 60 US grants and 4 published applications in this corpus.
Search patents in Y10S- Granted patents
- 60
- Published applications
- 4
- Assignees
- 37
- Inventors
- 120
- Latest grant
- 13 Nov 2007
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 6 | 0 |
| 1978 | 1 | 0 |
| 1979 | 4 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 1 | 0 |
| 1993 | 7 | 0 |
| 1994 | 2 | 0 |
| 1995 | 6 | 0 |
| 1996 | 5 | 0 |
| 1997 | 4 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 2 |
| 2006 | 0 | 0 |
| 2007 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Nitride single crystal and producing method thereof13 Nov 2007US 7,294,199 B2Sumitomo Electric Industries, Ltd.
- Crystal manufacturing method14 Aug 2007US 7,256,110 B2Nippon Mining & Metals Co., Ltd.
- Method for fabricating semiconductor device23 Aug 2005US 6,933,181 B2Matsushita Electric Industrial Co., Ltd.
- Process for preparing zinc oxide films containing p-type dopant5 Nov 2002US 6,475,825 B2The Curators of the University of Missouri
- Zinc oxide films containing P-type dopant and process for preparing same25 Jun 2002US 6,410,162 B1The Curators of the University of Missouri
- Nitride single crystal and producing method thereof15 Dec 2005US 2005/0277214 A1Sumitomo Electric Industries, Ltd.
- Crystal manufacturing method19 May 2005US 2005/0106883 A1Nippon Mining & Metals Co., Ltd.
- Method for fabricating semiconductor device15 Jul 2004US 2004/0137761 A1Matsushita Electric Industrial Co., Ltd.
- Zinc oxide films containing p-type dopant and process for preparing same14 Mar 2002US 2002/0031680 A1The Curators of the University of Missouri
Most cited
By later US patents
- Method of producing titanium nitride MOS device gate electrode640US 4,570,328 AMotorola, Inc. · 1986
- High efficiency light emitting diodes from bipolar gallium nitride558US 5,210,051 ACree Research, Inc. · 1993
- High electron mobility transistor with GaN/Al.sub.x Ga.sub.1-x N heterojunctions298US 5,192,987 AAPA Optics, Inc. · 1993
- Method for etching boron nitride236US 5,536,360 AInternational Business Machines Corporation · 1996
- Method of making a high electron mobility transistor204US 5,296,395 AAPA Optics, Inc. · 1994