Nitride single crystal and producing method thereof
AssigneeSumitomo Electric Industries, Ltd.
InventorsKoji Uematsu, Seiji Nakahata
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Abstract
A method of producing a nitride single crystal includes the step of forming a material transport medium layer containing a compound of rare earth element on a surface of a nitride crystal, and the step of making a seed crystal in contact with the material transport medium layer to grow a nitride single crystal on the seed crystal. The material transport medium layer contains the compound of rare earth element and at least one compound selected from a group of aluminum compound, alkaline earth compound and transition metal compound. With this producing method, a large nitride single crystal having a crystal size of at least 10 mm is obtained.
Claims19
A method of producing a nitride single crystal, comprising the steps of:
- forming a liquid-phase material transport medium layer containing a compound of rare earth element on a surface of a nitride source material;
- and
- making a seed crystal in contact with the liquid-phase material transport medium layer to grow a nitride single crystal on the seed crystal.
A method of producing a nitride single crystal, comprising the steps:
- a) providing a nitride source material;
- b) providing a liquid-phase material transport medium layer comprising a first compound containing at least one rare earth element, in contact with said nitride source material;
- c) providing a seed crystal in contact with said liquid-phase material transport medium layer;
- d) transporting a nitride material from said nitride source material through said liquid-phase material transport medium layer to said seed crystal;
- and
- e) growing a nitride single crystal from said nitride material on said seed crystal.
Dependencies are inferred from the claim text.