34,526 results
PatentTitle and first matching claimMatch
- US 2026/0324290 A1Published 15 Oct 2026
- US 2026/0324131 A1Published 15 Oct 2026Method for manufacturing photonic crystal gallium nitride light-emitting element, and lighting device
Nitride Semiconductors Co., Ltd.
- US 2026/0324028 A1Published 15 Oct 2026
- US 2026/0317952 A1Published 15 Oct 2026Controlled synthesis of seeding nanocrystals for the fabrication of transparent conducting perovskite oxides on non-epitaxial substrates
Paul Gregory Evans, Lakshmi Kumar Chinna Kannu +1inventors
- US 2026/0317951 A1Published 15 Oct 2026
- US 2026/0317950 A1Published 15 Oct 2026Strongly interacting, two-dimensional, dipolar spin ensemble in (111)-oriented diamond for quantum sensing and simulation
The Regents of the University of California
- US 2026/0317949 A1Published 15 Oct 2026poly-Si thin films preparation method based on thermal field design of vertical double-layer hot-wire array
Nanchang Hangkong University
- US 2026/0317948 A1Published 15 Oct 2026Method for producing crystalline film, vapor phase growth device, and ß-gallium oxide crystalline film
Taiyo Nippon Sanso Corporation
- US 2026/0317947 A1Published 15 Oct 2026
- US 2026/0317946 A1Published 15 Oct 2026Ion irradiation of functional wurtzites
Kyle P. Kelley, Steven Randolph +1inventors
- US 2026/0317945 A1Published 15 Oct 2026Method for producing group iii nitride semiconductor
Toyoda Gosei Co., Ltd.
- US 2026/0317905 A1Published 15 Oct 2026isolation plate for use in semiconductor processing chamber and related methods
Applied Materials, Inc.
- US 12,765,027 B2Granted 13 Oct 2026Low-temperature selective epitaxy contact approach
Applied Materials, Inc.
- US 12,765,019 B2Granted 13 Oct 2026Laminated structure, semiconductor device and method for manufacturing laminated structure
Shin-Etsu Chemical Co., Ltd.
- US 12,760,446 B2Granted 13 Oct 2026n-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method
Mitsubishi Chemical Corporation
- US 12,760,445 B2Granted 13 Oct 2026
- US 12,760,444 B2Granted 13 Oct 2026Single-crystal diamond and method of manufacturing the same
Sumitomo Electric Industries, Ltd.
- US 12,760,443 B2Granted 13 Oct 2026
- US 12,760,442 B2Granted 13 Oct 2026
- US 12,760,441 B2Granted 13 Oct 2026EPI isolation plate with gap and angle adjustment for process tuning
Applied Materials, Inc.
- US 12,760,440 B2Granted 13 Oct 2026Method and apparatus for growing silicon single crystal ingots
SK Siltron Co., Ltd.
- US 2026/0314345 A1Published 8 Oct 2026
- US 2026/0313999 A1Published 8 Oct 2026Sic wafer and sic epitaxial wafer
Resonac Corporation
- US 2026/0313998 A1Published 8 Oct 2026Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device
Sumitomo Electric Industries, Ltd.
- US 2026/0312028 A1Published 8 Oct 2026Cathode active material
Toyota Jidosha Kabushiki Kaisha