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US 2005/0106883 A1Published application
Crystal manufacturing method
AssigneeNippon Mining & Metals Co., Ltd.
InventorsShinichi Sasaki, Masashi Nakamura, Kenji Sato
Life of this patent
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Abstract
A method of growing a crystal (for example, a GaN system compound semiconductor crystal) on a substrate at least includes forming a first crystalline layer (a GaN system buffer layer), forming a second crystalline layer (a GaN system intermediate layer) and forming a third crystalline layer (a GaN system thick film layer). The three crystalline layers are respectively reared on conditions different from one another.
Claims13
1-11. (canceled)
A crystal producing method for growing a GaN system compound semiconductor crystal on a substrate, at least comprising:
- forming a first GaN system compound semiconductor crystalline layer on the substrate at a growth temperature ranging from 570° C. to 670° C.;
- forming a second GaN system compound semiconductor crystalline layer on the first GaN system compound semiconductor crystalline layer at a growth temperature ranging from 750° C. to 850° C.;
- and
- forming a third GaN system compound semiconductor crystalline layer on the second GaN system compound semiconductor crystalline layer at a growth temperature ranging from 950° C. to 1050° C.
1 more element
Dependencies are inferred from the claim text.