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US 6,933,181 B2Granted
Method for fabricating semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKaoru Inoue, Yoshito Ikeda, Katsunori Nishii, Yutaka Hirose
Life of this patent
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Abstract
In a method for fabricating a semiconductor device, a first semiconductor layer of aluminum gallium nitride is first formed on a substrate, and a protection film containing silicon is then formed on the first semiconductor layer in such a manner that a device-isolation region is uncovered. Thereafter, the method further includes the step of heat-treating the first semiconductor layer in an oxidizing atmosphere whose temperature is adjusted to be within a range of 950° C. or more and 1050° C. or less.
Claims7
A method for fabricating a semiconductor device, comprising:
- the step of forming on a first semiconductor layer of aluminum gallium nitride a protection film having an opening and containing silicon, and
- the step of heat-treating the first semiconductor layer in an oxidizing atmosphere whose temperature is adjusted to be within a range of 950° C. or more and 1050° C. or less.
Dependencies are inferred from the claim text.