Zinc oxide films containing P-type dopant and process for preparing same
AssigneeThe Curators of the University of Missouri
InventorsHenry W. White, Shen Zhu, Yungryel Ryu
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Abstract
A p-type zinc oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.
Claims25
A ZnO film on a substrate, the ZnO film containing a p-type dopant and having a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity no greater than about 1 ohm-cm, and a Hall Mobility of between about 0.1 and about 50 cm2/Vs.
Dependencies are inferred from the claim text.