Crystal manufacturing method
AssigneeNippon Mining & Metals Co., Ltd.
InventorsShinichi Sasaki, Masashi Nakamura, Kenji Sato
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Abstract
A method of growing a crystal (for example, a GaN system compound semiconductor crystal) on a substrate at least includes forming a first crystalline layer (a GaN system buffer layer), forming a second crystalline layer (a GaN system intermediate layer) and forming a third crystalline layer (a GaN system thick film layer). The three crystalline layers are respectively reared on conditions different from one another.
Claims12
A crystal producing method for growing a GaN system compound semiconductor crystal on a substrate, at least comprising:
- forming a first GaN system compound semiconductor crystalline layer on the substrate at a growth temperature ranging from 570° C. to 670° C.;
- forming a second GaN system compound semiconductor crystalline layer on the first GaN system compound semiconductor crystalline layer at a growth temperature ranging from 750° C. to 850° C.;
- and
- forming a third GaN system compound semiconductor crystalline layer on the second GaN system compound semiconductor crystalline layer at a growth temperature ranging from 950° C. to 1050° C.
A crystal producing method for growing a GaN system compound semiconductor crystal on a substrate, at least comprising:
- forming a first GaN system compound semiconductor crystalline layer on the substrate at a growth temperature ranging from 570° C. to 670° C.;
- forming a second GaN system compound semiconductor crystalline layer on the first GaN system compound semiconductor crystalline layer at a growth temperature ranging from 750° C. to 850° C.;
- and
- forming a third GaN system compound semiconductor crystalline layer on the second GaN system compound semiconductor crystalline layer at a growth temperature ranging from 950° C. to 1050° C.
- wherein the first, second and third GaN system compound semiconductor crystalline layers are single crystalline layers respectively.
A crystal producing method for growing a GaN system compound semiconductor crystal on a substrate, at least comprising:
- forming a first GaN system compound semiconductor crystalline layer on the substrate at a growth temperature ranging from 570° C. to 670° C.;
- forming a second GaN system compound semiconductor crystalline layer on the first GaN system compound semiconductor crystalline layer at a growth temperature ranging from 750° C. to 850° C.;
- and
- forming a third GaN system compound semiconductor crystalline layer on the second GaN system compound semiconductor crystalline layer at a growth temperature ranging from 950° C. to 1050° C.
- wherein, after a rearing process of the second GaN system compound semiconductor crystalline layer is completed, a temperature is kept equal to or higher than a growth temperature of the second GaN system compound semiconductor crystalline layer for a time ranging from twenty minutes to four hours, and subsequently growth of the third GaN system compound semiconductor crystalline layer is started in the process of forming the third GaN system compound semiconductor crystalline layer.
A crystal producing method for growing a GaN system compound semiconductor crystal on a substrate, at least comprising:
- forming a first GaN system compound semiconductor crystalline layer on the substrate at a growth temperature ranging from 570° C. to 670° C.;
- forming a second GaN system compound semiconductor crystalline layer on the first GaN system compound semiconductor crystalline layer at a growth temperature ranging from 750° C. to 850° C.;
- and
- forming a third GaN system compound semiconductor crystalline layer on the second GaN system compound semiconductor crystalline layer at a growth temperature ranging from 950° C. to 1050° C.
- wherein, after a rearing process of the second GaN system compound semiconductor crystalline layer is completed, a temperature is kept equal to or higher than a growth temperature of the second GaN system compound semiconductor crystalline layer for a time ranging from twenty minutes to four hours, and subsequently growth of the third GaN system compound semiconductor crystalline layer is started in the process of forming the third GaN system compound semiconductor crystalline layer, and wherein the first GaN system compound semiconductor crystalline layer is formed at a film thickness ranging from 5 nm to 300 nm.
The A crystal producing method for growing a GaN system compound semiconductor crystal on a substrate, at least comprising:
- forming a first GaN system compound semiconductor crystalline layer on the substrate at a growth temperature ranging from 570° C. to 670° C.;
- forming a second GaN system compound semiconductor crystalline layer on the first GaN system compound semiconductor crystalline layer at a growth temperature ranging from 750° C. to 850° C.;
- and
- forming a third GaN system compound semiconductor crystalline layer on the second GaN system compound semiconductor crystalline layer at a growth temperature ranging from 950° C. to 1050° C.
- wherein, after a rearing process of the second GaN system compound semiconductor crystalline layer is completed, a temperature is kept equal to or higher than a growth temperature of the second GaN system compound semiconductor crystalline layer for a time ranging from twenty minutes to four hours, and subsequently growth of the third GaN system compound semiconductor crystalline layer is started in the process of forming the third GaN system compound semiconductor crystalline layer, and wherein the second GaN system compound semiconductor crystalline layer is formed at a film thickness ranging from 0.5 μm to 50 μm.
Dependencies are inferred from the claim text.