Y10S 148/044
Edge diffusion under mask
Y10S148/044 (Edge diffusion under mask) appears on 9 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 9
- Published applications
- 0
- Assignees
- 5
- Inventors
- 18
- Latest grant
- 16 Mar 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 3 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Mesa isolation Refill Process for Silicon on Insulator Technology Using Flowage Oxides as the Refill Material16 Mar 1999US 5,882,981 ATexas Instruments Incorporated
- Non-uniformly nitrided gate oxide and method15 Sep 1998US 5,808,348 AHarris Corporation
- Method for making semiconductor device having field limiting ring30 Sep 1997US 5,672,528 ADelco Electronics Corporation
- Method of making non-uniformly nitrided gate oxide22 Jul 1997US 5,650,344 AHarris Corporation
- Semiconductor device having field limiting ring and a process therefor13 Aug 1996US 5,545,915 ADelco Electronics Corporation
No published applications in this class yet.
Most cited
By later US patents
- Edge doping processes for mesa structures in SOS and SOI devices33US 5,028,564 A1991
- Semiconductor device having field limiting ring and a process therefor32US 5,545,915 ADelco Electronics Corporation · 1996
- Manufacturing method of insulated gate field effect transistor using reflowable sidewall spacers29US 4,755,479 AFujitsu Limited · 1988
- Mesa isolation Refill Process for Silicon on Insulator Technology Using Flowage Oxides as the Refill Material27US 5,882,981 ATexas Instruments Incorporated · 1999
- Method of making non-uniformly nitrided gate oxide22US 5,650,344 AHarris Corporation · 1997