Y10S 148/11
Metal-organic cvd, ruehrwein type
Official title: Metal-organic CVD, ruehrwein type
Y10S148/11 (Metal-organic cvd, ruehrwein type) appears on 69 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 69
- Published applications
- 0
- Assignees
- 45
- Inventors
- 135
- Latest grant
- 12 Jan 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 6 | 0 |
| 1987 | 1 | 0 |
| 1988 | 4 | 0 |
| 1989 | 12 | 0 |
| 1990 | 10 | 0 |
| 1991 | 5 | 0 |
| 1992 | 5 | 0 |
| 1993 | 6 | 0 |
| 1994 | 5 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Formation of InGaSa p-n Junction by control of growth temperature12 Jan 1999US 5,858,818 AElectronics and Telecommunications Research Institute
- Method for fabricating compound semiconductor laser4 Aug 1998US 5,789,273 ASony Corporation
- Semiconductor laser device8 Apr 1997US 5,619,519 ASanyo Electric Co., Ltd.
- Method of manufacturing a single crystal layers2 May 1995US 5,411,915 ASanyo Electric Co., Ltd.
- Method for producing a semiconductor device29 Nov 1994US 5,369,044 AMitsubishi Denki Kabushiki Kaisha
No published applications in this class yet.
Most cited
By later US patents
- Process for growing III-V compound semiconductors on sapphire using a buffer layer121US 4,855,249 ANagoya University · 1989
- Selective OMCVD growth of compound semiconductor materials on silicon substrates107US 4,826,784 AKopin Corporation · 1989
- Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system92US 4,147,571 AHewlett-Packard Company · 1979
- Group VI doping of III-V semiconductors during ALE88US 4,859,627 ANEC Corporation · 1989
- Doping III-V compound semiconductor devices with group VI monolayers using ALE84US 4,845,049 ANEC Corporation · 1989