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US 5,619,519 AGranted
Semiconductor laser device
AssigneeSanyo Electric Co., Ltd.
InventorsHiroki Hamada, Shoji Honda, Masayuki Shono, Takao Yamaguchi
Life of this patent
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Abstract
A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a <011> direction.
Claims28
In a semiconductor laser device comprising:
- a GaAs substrate of a first conductivity type having a main surface inclined by at least about 5.degree. from a {100} plane of said substrate in a <011>
- direction,
- a first clad layer of a first conductivity type containing Al, Ga, In and P, formed on said main surface,
- an active layer containing Ga, In and P, formed on said first clad layer,
- a second clad layer of a second conductivity type containing Al, Ga, In and P, formed on said active layer,
- an intermediate layer formed on said second clad layer, and
- a GaAs cap layer of the second conductivity type formed on said intermediate layer.
4 more elements
In a semiconductor laser device comprising:
- a GaAs substrate of a first conductivity type having a main surface inclined by at least about 5.degree. from a {100} plane of said substrate in a <011>
- direction,
- a first clad layer of a first conductivity type containing Al, Ga, In and P, formed on said main surface,
- an active layer containing Ga, In and P, formed on said first clad layer,
- a second clad layer of a second conductivity type containing Al, Ga, In and P, formed on said active layer,
- an intermediate layer formed on said second clad layer, and
- a GaAs cap layer of the second conductivity type formed on said intermediate layer,
- whereby a main wavelength of light emitted from said semiconductor laser device is shorter than that of light emitted from a semiconductor laser device including a GaAs substrate having a main surface of a {100} plane.
5 more elements
In a semiconductor light emitting device comprising:
- a GaAs substrate of a first conductivity type having a main surface inclined by at least about 5.degree. from a {100} plane of said substrate in a <011>
- direction,
- a first clad layer of a first conductivity type containing Al, Ga, In and P, formed on said main surface,
- an active layer containing Ga, In and P, formed on said first clad layer,
- a second clad layer of a second conductivity type containing Al, Ga, In and P, formed on said active layer,
- an intermediate layer formed on said second clad layer, and
- a GaAs cap layer of the second conductivity type formed on said intermediate layer.
4 more elements
In a semiconductor light emitting device comprising:
- a GaAs substrate of a first conductivity type having a main surface inclined by at least about 5.degree. from a {100} plane of said substrate in a <011>
- direction,
- a clad layer of a first conductivity type containing Al, Ga, In and P, formed on said main surface,
- an active layer containing Ga, In and P, formed on said first clad layer,
- a second clad layer of a second conductivity type containing Al, Ga, In and P, formed on said active layer,
- an intermediate layer formed on said second clad layer,
- a GaAs cap layer of the second conductivity type formed on said intermediate layer, and
- whereby a main wavelength of light emitted from said semiconductor light emitting device is shorter than that of light emitted from a semiconductor light emitting device including a GaAs substrate having a main surface of a {100} plane.
5 more elements
Dependencies are inferred from the claim text.