Process for growing III-V compound semiconductors on sapphire using a buffer layer
AssigneeNagoya University
InventorsIsamu Akasaki, Nobuhiko Sawaki
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Abstract
In organometallic vapor phase hetero-epitaxial processes for growing Al.sub.x Ga.sub.1-x N films on a sapphire substrate, the substrate is subjected to a preheat treatment of brief duration, such as less than 2 minutes, at relatively low temperatures in an atmosphere comprising Al-containing organometallic compound, NH.sub.3 and H.sub.2 gases, prior to the hetero epitaxial growth of Al.sub.x Ga.sub.1-x N films. Thus, single crystalline Al.sub.x Ga.sub.1-x N layers of high uniformity and high quality having smooth, flat surfaces are provided. Multi-layers grown according to the process of the invention are free from cracks and have preferable UV or blue light emission properties.
Claims9
A process for growing a compound semiconductor wherein an organometallic compound and ammonia gas (NH3) are reacted in hydrogen gas (H.sub.2) or hydrogen gas mixed with nitrogen gas (N.sub.2) to grow epitaxially at least one layer of single crystalline Al.sub.x Ga.sub.1-x N (0.ltoreq.x<1) on a sapphire substrate, said process comprising subjecting the sapphire substrate to a heat treatment of brief duration in a atmosphere comprising at least an Al-containing organometallic compound, NH.sub.3, and H.sub.2 at a temperature lower than the single crystalline AlN growing temperature to deposit a non-single crystalline buffer layer of an AlN compound on the surface of the sapphire substrate and thereafter growing epitaxially at a high temperature said single crystalline Al.sub.x Ga.sub.1-x N directly on said non-single crystalline buffer layer.
Dependencies are inferred from the claim text.