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US 5,411,915 AGranted
Method of manufacturing a single crystal layers
AssigneeSanyo Electric Co., Ltd.
InventorsHiroki Hamada, Shoji Honda, Masayuki Shono, Takao Yamaguchi
Life of this patent
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Abstract
A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a <011> direction.
Claims9
A method of growing a crystal layer of a compound semiconductor, comprising the steps of:
- preparing a GaAs substrate having a surface inclined by at least about 5.degree. from a {100} plane of said substrate in a <011>
- direction, and
- epitaxially growing a crystal layer of one selected from a group consisting of a GaInP system and an AlGaInP system on said surface to reduce the density of crystal defects of the grown crystal layer and provide a higher photoluminescence peak energy as compared with a crystal layer grown on a {100} plane of a GaAs substrate.
A method of growing a crystal layer of a compound semiconductor, comprising the steps of:
- preparing a GaAs substrate having a surface inclined by at least about 5.degree. from a {100} plane of said substrate in a <011>
- direction, and
- epitaxially growing an AlGaInP system crystal layer on said surface.
A method of growing a crystal layer of a compound semiconductor, comprising the steps of:
- preparing a GaAs substrate having a surface inclined by at least about 5.degree. from a {100} plane of said substrate in a <011>
- direction, and
- epitaxially growing a GaInP system crystal layer on said surface.
Dependencies are inferred from the claim text.