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US 4,147,571 AGranted
Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
AssigneeHewlett-Packard Company
InventorsGerald B. Stringfellow, Howard T. Hall, Jr.
Life of this patent
Estimating the term…
Abstract
A process is provided for the VPE growth of III/V compounds such as Al.sub.x Ga.sub.1-x As in which the group III elements are transported into the reaction zone in the form of organometallic compounds in the presence of a gaseous halogen or hydrogen halide such as hydrogen chloride (HCl).
Claims28
A process for the preparation of III/V semiconductor materials comprising the steps of:
- (a) positioning in a reaction chamber a substrate of a material suitable for epitaxial growth of III/V compounds thereon;
- (b) introducing into said reaction chamber a gaseous mixture including at least one organometallic compound of a group III element, at least one compound of a group V element, one of a hydrogen halide and a halogen, and hydrogen;
- (c) heating said reaction chamber walls to a temperature in the range 750.degree. C. to 1000.degree. C., and heating said substrate to a temperature in the range 650.degree. C. to 850.degree. C.;
- and
- (d) depositing on said substrate an epitaxial layer of a III/V compound of said group III and group V elements.
2 more elements
Dependencies are inferred from the claim text.