Formation of InGaSa p-n Junction by control of growth temperature
AssigneeElectronics and Telecommunications Research Institute
InventorsJeong-Rae Ro, Seong-Bock Kim, El-Hang Lee
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Abstract
An epitaxial growth method for a compound semiconductor thin film, capable of forming a p-n junction with an atomic-scale ultra-micro structure is disclosed. The method involves loading the compound semiconductor substrate in a reaction chamber, injecting Group V and III metal organic source gases not processed by a thermal pre-decomposition process into the reaction chamber, and growing a p- or n-type compound semiconductor on the compound semiconductor substrate while adjusting the growth temperature of the p- or n-type compound semiconductor.
Claims10
Formation of an InGaAs p-n junction by control of growth temperature comprising the steps of:
- loading a compound semiconductor substrate into a reaction crucible;
- injecting a Group V metal organic source gas not processed by a thermal pre-decomposition process and a Group III metal organic source gas processed by a thermal pre-decomposition process into the reaction chamber;
- and
- growing p and n type compound semiconductor layers on the compound semiconductor substrate by adjusting growth temperature.
A method for p-n junction fabrication of an indium-containing material, said method comprising the steps of:
- introducing Group V and Group III metal organic source gases into the presence of a temperature controlled compound indium-containing semiconductor substrate;
- changing the controlled temperature of the substrate as compound Group V/III semiconductor growth occurs on the substrate to cause respectively corresponding successive layers of p-type and n-type indium-containing material to be formed without the successive introduction of different dopant material.
Dependencies are inferred from the claim text.