Y10S 148/148
Silicon carbide
Y10S148/148 (Silicon carbide) appears on 76 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 76
- Published applications
- 0
- Assignees
- 42
- Inventors
- 125
- Latest grant
- 2 Oct 2001
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 3 | 0 |
| 1989 | 5 | 0 |
| 1990 | 4 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 8 | 0 |
| 1994 | 7 | 0 |
| 1995 | 10 | 0 |
| 1996 | 3 | 0 |
| 1997 | 8 | 0 |
| 1998 | 6 | 0 |
| 1999 | 3 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Highly uniform silicon carbide epitaxial layers2 Oct 2001US 6,297,522 B1Cree, Inc.
- Silicon carbide integrated circuits20 Feb 2001US 6,191,458 B1General Electric Company
- Semiconductor memory device having capacitive storage therefor31 Oct 2000US 6,140,671 ASamsung Electronics Co., Ltd.
- Growth of very uniform silicon carbide epitaxial layers16 May 2000US 6,063,186 ACree, Inc.
- Low resistance, stable ohmic contacts to silicon carbide, and method of making the same9 Nov 1999US 5,980,265 AAdvanced Technology Materials, Inc.
No published applications in this class yet.
Most cited
By later US patents
- High efficiency light emitting diodes from bipolar gallium nitride558US 5,210,051 ACree Research, Inc. · 1993
- Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product442US 5,200,022 ACree Research, Inc. · 1993
- Method of forming green light emitting diode in silicon carbide262US 5,604,135 ACree Research, Inc. · 1997
- Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon125US 4,912,064 ANorth Carolina State University · 1990
- Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide116US 4,866,005 ANorth Carolina State University · 1989