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US 5,200,022 AGranted
Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
AssigneeCree Research, Inc.
InventorsHua-Shuang Kong, Calvin H. Carter, Jr.
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Abstract
The abstract isn’t available for this document.
Claims4
A method of improving a surface of alpha silicon carbide for the growth thereon of a beta silicon carbide epitaxial layer, the method comprising:
- mechanically preparing the surface of a {0001} plane of an alpha silicon carbide substrate;
- and thereafter
- introducing atoms selected from the group consisting of aluminum, gallium and phosphorous into vacant lattice positions along the mechanically prepared surface to thereby prevent the vacant lattice positions from encouraging the repetitive growth of 6H silicon carbide at those lattice positions so that chemical vapor deposition conditions that are otherwise favorable for epitaxial growth of beta silicon carbide upon the basal plane will result in such growth of beta silicon carbide upon the mechanically prepared alpha silicon carbide substrate.
A method of growing epitaxial layers of beta silicon carbide on non-natural surfaces of alpha silicon carbide, the method comprising:
- separating a bulk single crystal of 6H silicon carbide into a substrate crystal with at least one of the {0001} surfaces thereof exposed;
- introducing atoms other than silicon or carbon lattice positions along the {0001} surface of the 6H silicon carbide substrate to thereby prevent the vacant lattice positions from encouraging the repetitive growth of 6H silicon carbide at those lattice positions;
- and
- exposing the {0001}6H surface to carbon containing and silicon containing species under conditions for which the growth of beta silicon carbide is thermodynamically favored for a time sufficient for a desired epitaxial layer of beta silicon carbide to form upon the {0001} surface of the silicon carbide substrate.
1 more element
Dependencies are inferred from the claim text.