Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon

A method of producing a monocrystalline 6H SiC thin film homoepitaxially deposited on an off axis 6H SiC substrate, wherein the film is characterized by a smooth surface morphology, substantially uniform thickness and a low, device quality defect level, said method comprising:

• lapping a 6H SiC substrate crystal to expose a planar surface that is inclined more than one degree off axis with respect a basal plane thereof substantially towards one of the <1120>
• directions;
• preparing the off axis planar surface of the substrate to be receptive to epitaxial growth thereon;
• heating the substrate crystal in a growth chamber;
• introducing a carrier gas, a vaporized silicon-containing material and a vaporized carbon-containing material into the growth chamber while providing sufficient energy to create surface diffusion of silicon and carbon species at the substrate planar surface and establish a homoepitaxial growth of monocrystalline 6H SiC;
• and
• maintaining the carrier gas, silicon-containing material and carbon-containing material flows and the energy levels for a time sufficient to grow a film of desired thickness.

A method of producing a device quality silicon carbide film on a silicon carbide substrate, said method comprising:

• producing by sublimation a large, device quality Alpha-SiC single crystal;
• slicing the crystal to form wafers;
• preparing one of the wafers to establish a planar surface that is inclined more than one degree off axis with respect to a basal plane of the crystal substantially towards one of the <1120>
• directions;
• depositing a film of Alpha-SiC on the planar surface of the substrate.