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US 6,140,671 AGranted
Semiconductor memory device having capacitive storage therefor
AssigneeSamsung Electronics Co., Ltd.
InventorSang-in Lee
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Abstract
A capacitor in a semiconductor device having a dielectric film formed of high dielectric material and a manufacturing method therefor are provided. The capacitor consists of electrodes including a dielectric film and an amorphous SiC layer. Thus, the diffusion of oxygen atoms through a grain boundary into an underlayer and the formation of an oxide layer on the surface of the SiC layer can both be prevented, providing for a highly reliable capacitor electrode and an equivalent oxide thickness which is no thicker than required.
Claims7
A capacitor in a semiconductor memory device comprising:
- an impurity ions doped amorphous silicon carbide storage electrode on a semiconductor substrate;
- a dielectric layer on said impurity ions doped amorphous silicon carbide storage electrode, said dielectric layer being formed of a ferroelectric material or a paraelectric material;
- and
- a plate electrode on said dielectric layer.
1 more element
Dependencies are inferred from the claim text.