Y10S 148/163
Thick-thin oxides
Y10S148/163 (Thick-thin oxides) appears on 44 US grants and 4 published applications in this corpus.
Search patents in Y10S- Granted patents
- 44
- Published applications
- 4
- Assignees
- 27
- Inventors
- 84
- Latest grant
- 25 Mar 2008
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 3 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 7 | 0 |
| 1998 | 4 | 0 |
| 1999 | 3 | 0 |
| 2000 | 4 | 0 |
| 2001 | 0 | 0 |
| 2002 | 3 | 1 |
| 2003 | 0 | 1 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor devices and methods of manufacturing the same25 Mar 2008US 7,348,247 B2Dongbu Electronics Co., Ltd.
- Active matrix display device including a transistor5 Nov 2002US 6,476,447 B1Semiconductor Energy Laboratory Co.Ltd.
- Dual gate oxide process for deep submicron ICS19 Mar 2002US 6,358,819 B1LSI Logic Corporation
- Method for fabricating different gate oxide thicknesses within the same chip1 Jan 2002US 6,335,262 B1
- Insulation layer structure and method for making the same21 Nov 2000US 6,150,220 AHyundai Electronics Industries Co., Ltd.
- Semiconductor devices and methods of manufacturing the same14 Aug 2008US 2008/0191290 A1
- Semiconductor devices and methods of manufacturing the same16 Jun 2005US 2005/0130441 A1Dongbu Electronics Co., Ltd.
- Method for fabricating different gate oxide thickness within the same chip22 May 2003US 2003/0094660 A1
- Dual gate oxide process for deep submicron ICS16 May 2002US 2002/0058382 A1
Most cited
By later US patents
- Method for forming a field-effect transistor including anodic oxidation of the gate207US 5,521,107 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Semiconductor device and method for forming the same186US 5,485,019 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Method for forming a high voltage gate dielectric for use in integrated circuit137US 5,861,347 AMotorola, Inc. · 1999
- Active matrix display device including a transistor135US 6,476,447 B1Semiconductor Energy Laboratory Co.Ltd. · 2002
- Method for forming a taper shaped contact hole by oxidizing a wiring116US 5,849,611 ASemiconductor Energy Laboratory Co.Ltd. · 1998