Insulation layer structure and method for making the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsYun-Jun Huh, Nam-Hoon Cho
Life of this patent
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Abstract
A dual thickness gate insulation layer, for use with, e.g., a dual gate MOSFET (Metal Oxide Semiconductor Field Effect Transistor), is formed using a more simplified method and improves the reliability. An impurity layer is formed in the semiconductor substrate, and the impurity layer includes a first portion and a second portion. An insulation layer is grown in the semiconductor substrate, and the insulation layer includes a first layer and a second layer which are different from each other in thickness. The present invention simplifies the insulation layer fabricating steps and improves product reliability.
Claims26
A method of making a dual thickness insulation layer structure, comprising the steps of:
- forming an impurity layer in a substrate, the impurity layer including a first portion having a first amount of an impurity and a second portion having a second amount of the impurity, the first and second portions being formed simultaneously;
- and
- growing an insulation layer in the substrate, the insulation layer including a first layer and a second layer formed beneath the first portion and the second portion, respectively, wherein the first layer and the second layer are grown at different growth rates due to the first and second amounts of the impurity such that the first and second layers differ from each other in thickness.
A method of making a dual thickness insulation layer structure, comprising:
- forming a pad layer on a substrate, the pad layer including a first pad portion and a second pad portion;
- annealing, under an atmosphere of an impurity gas, the pad layer and the substrate to form an impurity layer between the pad layer and the substrate, wherein the impurity layer includes a first portion having a first amount of an impurity and a second portion having a second amount of the impurity, and the first amount of the impurity is less than the second amount of impurity;
- removing the pad layer;
- and
- growing an insulation layer in the substrate, the insulation layer including a first layer and a second layer formed beneath the first portion and the second portion, respectively, wherein the first layer and the second layer differ from each other in thickness.
A method of forming a dual thickness insulation layer structure, comprising the steps of:
- forming an impurity layer in a substrate, the impurity layer including a first portion having a first amount of an impurity and a second portion having a second amount of the impurity, wherein the first portion of the impurity layer is thinner than the second portion of the impurity layer;
- and
- growing an insulation layer in the substrate, the insulation layer including a first portion and a second portion, wherein the first and second portions of the insulation layer are located beneath the first and second portions of the impurity layer, respectively, and wherein the first and second portions of the insulation layer are grown at different growth rates, such that the first and second portions of the insulation layer have different thicknesses.
Dependencies are inferred from the claim text.