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US 2008/0191290 A1Published application
Semiconductor devices and methods of manufacturing the same
OwnerGeon-Ook Parkinventor
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Abstract
Semiconductor devices and methods of manufacturing the same are disclosed. A disclosed semiconductor device comprises a semiconductor substrate; a gate formed on the semiconductor substrate; a gate oxide layer interposed between the semiconductor substrate and the gate; and source and drain regions formed within the substrate at opposite sides of the gate. The gate oxide layer has a first region with a first thickness and a second region with a second thickness. The second thickness is thicker than the first thickness.
Claims15
A semiconductor device comprising:
- a semiconductor substrate;
- a gate on the semiconductor substrate;
- a gate oxide layer between the semiconductor substrate and the gate, the gate oxide layer having a first region with a first thickness and a second region with a second thickness greater than the first thickness;
- and
- source and drain regions in the substrate at opposite sides of the gate.
2 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a gate oxide layer having a first region with a first thickness and a second region with a second thickness, the second thickness is thicker than the first thickness;
- a gate above the first and second regions of the gate oxide layer;
- source located adjacent the first region;
- and
- a drain located adjacent the second region.
3 more elements
Dependencies are inferred from the claim text.