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US 7,348,247 B2Granted
Semiconductor devices and methods of manufacturing the same
AssigneeDongbu Electronics Co., Ltd.
InventorGeon-Ook Park
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Abstract
Semiconductor devices and methods of manufacturing the same are disclosed. A disclosed semiconductor device comprises a semiconductor substrate; a gate formed on the semiconductor substrate; a gate oxide layer interposed between the semiconductor substrate and the gate; and source and drain regions formed within the substrate at opposite sides of the gate. The gate oxide layer has a first region with a first thickness and a second region with a second thickness. The second thickness is thicker than the first thickness.
Claims11
A method of manufacturing a semiconductor device, comprising:
- forming a mask pattern on a gate region of a semiconductor substrate;
- forming a first oxide layer on an area of the semiconductor substrate exposed by the mask pattern, the first oxide layer having a first thickness and a tapered profile at an edge of the mask pattern;
- removing the mask pattern to expose the gate region;
- forming a second oxide layer on the gate region to form a gate oxide layer comprising the first and second oxide layers, the second oxide layer having a second thickness, the second thickness being less than the first thickness;
- forming a gate material layer on the gate oxide layer,
- forming a gate from the gate material layer, a first side of the gate overlapping the first oxide layer and a second side of the gate overlapping the second oxide layer;
- and
- forming source and drain regions within the substrate at opposite sides of the gate.
5 more elements
Dependencies are inferred from the claim text.