Semiconductor device and method for forming the same

A semiconductor device comprising:

• a substrate;
• a capacitor provided on said substrate;
• a first wiring provided on said substrate in the same layer as first electrode of said capacitor;
• and
• a second wiring provided on said substrate in the same layer as a second electrode of said capacitor,
• wherein said first wiring and said second wiring cross each other at a location B other than that of said capacitor such that said second wiring completely crosses said first wiring, and said first wiring is provided with an oxide of a material of said first wiring on an upper or side surface of said first wiring, and said first electrode is provided with an oxide of a material of said first electrode on an upper surface of said first electrode at a thickness different from that of said oxide of the material of said first wiring at the location B.

A semiconductor device comprising:

• a first MIS transistor provided on a substrate and comprising a first channel semiconductor layer formed above said substrate, a first gate electrode formed over said first channel semiconductor layer and an oxide of a material of said first gate electrode provided on at least a side surface of said first gate electrode;
• and
• a second MIS transistor provided on said substrate and comprising a second channel semiconductor layer formed above said substrate, a second gate electrode formed over said second channel semiconductor layer, and an oxide of a material of said second gate electrode of said second MIS transistor provided on at least a side surface of said second gate electrode of said second MIS transistor,
• wherein said oxide of the material of said first gate electrode of said first MIS transistor has a thickness different from that of said oxide of the material of said second gate electrode of said second MIS transistor.

An insulated gate semiconductor device comprising:

• a semiconductor layer formed above a substrate having an insulating surface, said semiconductor layer including at least a channel therein;
• a gate insulating layer formed on said semiconductor layer;
• a metal gate electrode formed over said channel with said gate insulating layer interposed therebetween;
• an anodic oxide layer covering said metal gate electrode;
• a pair of first impurity regions sandwiching said channel;
• and
• second impurity regions each provided adjacent to corresponding one of said first impurity regions.

A semiconductor device for switching a pixel transistor in an electro-optical display device of an active matrix type comprising:

• a source and dram provided above an insulating substrate;
• a channel located between said source and said drain and above said substrate;
• a gate electrode provided adjacent to said channel with a gate insulating layer therebetween wherein said gate electrode is provided over said channel;
• and
• a capacitor provided on said insulating substrate and connected in series with one of said source and said drain,
• wherein said gate electrode is provided with an anodic oxide film of a surface of said gate electrode and boundaries between said channel and said source and a boundary between said channel and said drain are coextensive with side surfaces of said anodic oxide film.