Y10S 148/134
Remelt
Y10S148/134 (Remelt) appears on 7 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 7
- Published applications
- 0
- Assignees
- 6
- Inventors
- 22
- Latest grant
- 8 Sep 1992
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of crystallizing a semiconductor thin film8 Sep 1992US 5,145,808 ASony Corporation
- Method for widening the laser planarization process window for metalized films on semiconductor wafers21 Apr 1992US 5,106,779 AMicron Technology, Inc.
- Self-aligned contacts for bipolar process21 Jun 1988US 4,752,591 AHarris Corporation
- Lateral epitaxial growth by seeded solidification2 Jun 1987US 4,670,088 AMassachusetts Institute of Technology
- Method for forming high yield epitaxial wafers21 Apr 1987US 4,659,400 AGeneral Instrument Corporation
No published applications in this class yet.
Most cited
By later US patents
- Method of crystallizing a semiconductor thin film216US 5,145,808 ASony Corporation · 1992
- Dual electrically insulated solar cells55US 4,094,704 A1978
- Lateral epitaxial growth by seeded solidification34US 4,670,088 AMassachusetts Institute of Technology · 1987
- Method for forming high yield epitaxial wafers15US 4,659,400 AGeneral Instrument Corporation · 1987
- Process for producing large-size substrate-based semiconductor material utilizing vapor-phase deposition and subsequent resolidification12US 4,113,532 AWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH · 1978