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AssigneeWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
InventorsBernhard Authier, Rudolf Griesshammer, Franz Koppl, Winfried Lang, Erhard Sirtl, Heinz-Jorg Rath
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A process for producing large-size, substrate-based semiconductor material of silicon deposited on a substrate body from the gaseous phase, which comprises the steps of heating a substrate body by direct current passage to deposition temperature, contacting said body with a gaseous silicon-containing mixture to which a dopant has been added, until a deposit having a thickness from about 10 to 200 .mu.m has been formed, subsequently melting 80 to 100% of the deposited silicon layer from the free surface downward, and resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward. Large-sized plates obtained by cutting up the semiconductor material are used as solar cells.
A process for producing large-size, substrate-based semiconductor material of silicon deposited on a substrate body from the gaseous phase, which comprises the steps of heating a substrate body by direct current passage to deposition temperature, contacting said body with a gaseous silicon-containing mixture to which a dopant has been added, until a deposit having a thickness from about 10 to 200 .mu.m has been formed, subsequently melting 80 to 100% of the deposited silicon layer from the free surface downward, and resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upwardly to cause an oriented growth of the resolidifying silicon from the substrate body towards the free surface.
Dependencies are inferred from the claim text.