Y10S 148/032
Diffusion length
Y10S148/032 (Diffusion length) appears on 5 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 5
- Published applications
- 0
- Assignees
- 2
- Inventors
- 7
- Latest grant
- 1 Aug 2000
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of controlling effective channel length of semiconductor device by non-doping implantation at elevated energies1 Aug 2000US 6,096,628 AAdvanced Micro Devices, Inc.
- Germanium implant for use with ultra-shallow junctions28 Mar 1995US 5,401,674 AAdvanced Micro Devices, Inc.
- Method of manufacturing a semiconductor integrated circuit device comprising an MOS transistor and a bipolar transistor23 Oct 1990US 4,965,220 AKabushiki Kaisha Toshiba
- Method for manufacturing a BiCMOS device4 Apr 1989US 4,818,720 AKabushiki Kaisha Toshiba
- Semiconductor p-n junction solar cell and method of manufacture4 Jan 1977US 4,001,864 A
No published applications in this class yet.
Most cited
By later US patents
- Semiconductor p-n junction solar cell and method of manufacture91US 4,001,864 A1977
- Germanium implant for use with ultra-shallow junctions36US 5,401,674 AAdvanced Micro Devices, Inc. · 1995
- Method for manufacturing a BiCMOS device24US 4,818,720 AKabushiki Kaisha Toshiba · 1989
- Method of manufacturing a semiconductor integrated circuit device comprising an MOS transistor and a bipolar transistor21US 4,965,220 AKabushiki Kaisha Toshiba · 1990
- Method of controlling effective channel length of semiconductor device by non-doping implantation at elevated energies12US 6,096,628 AAdvanced Micro Devices, Inc. · 2000