Y10S 148/073
Hollow body
Y10S148/073 (Hollow body) appears on 23 US grants and 3 published applications in this corpus.
Search patents in Y10S- Granted patents
- 23
- Published applications
- 3
- Assignees
- 13
- Inventors
- 43
- Latest grant
- 11 Nov 2003
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 1 | 1 |
| 2003 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor device having cavities with submicrometer dimensions generated by a swelling process11 Nov 2003US 6,645,850 B2Infineon Technologies AG
- Method and apparatus for treating the internal surface of a gas bottle19 Feb 2002US 6,348,241 B2L Air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation des Procedes Georges Claude
- Multi-level conduction structure for VLSI circuits27 Oct 1998US 5,828,121 AUnited Microelectronics Corp.
- Stress relaxation in dielectric before metalization9 Sep 1997US 5,665,632 AUnited Microelectronics Corp.
- Stress relaxation in dielectric before metallization26 Aug 1997US 5,661,049 AUnited Microelectronics Corp.
- Semiconductor device having cavities with submicrometer dimensions generated by a swelling process13 Mar 2003US 2003/0049914 A1Infineon Technologies AG
- Method and apparatus for treating the internal surface of a gas bottle12 Sep 2002US 2002/0125257 A1
- Method and apparatus for treating the internal surface of a gas bottle15 Nov 2001US 2001/0041228 A1L Air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation des Procedes Georges Claude
Most cited
By later US patents
- Method of forming a semiconductor structure having an air region510US 5,324,683 AMotorola, Inc. · 1994
- Semiconductor structure having an air region and method of forming the semiconductor structure162US 5,510,645 AMotorola, Inc. · 1996
- Method of depositing elemental amorphous silicon114US 4,068,020 ASiemens Aktiengesellschaft · 1978
- Multi-level conductor process in VLSI fabrication utilizing an air bridge76US 5,413,962 AUnited Microelectronics Corp. · 1995
- Low stress polysilicon microstructures36US 5,059,556 ASiemens-Bendix Automotive Electronics L. P. · 1991