Semiconductor structure having an air region and method of forming the semiconductor structure

A semiconductor structure formed on a single substrate comprising:

• a dielectric isolation region overlying the substrate;
• a first conductive region overlying the dielectric isolation region;
• a second conductive region overlying the dielectric isolation region and laterally separated from the first conductive region;
• an enclosed cavity between the first conductive region and the second conductive region, wherein the enclosed cavity contains a gas composition different from a gas composition of the atmosphere;
• a solid dielectric layer overlying and in contact with the first conductive region and the second conductive region;
• a layer of material overlying the dielectric layer and overlying a top portion of the enclosed cavity in order to isolate the enclosed cavity from an ambient air environment;
• and
• a dielectric region formed overlying the growth material portion.

A semiconductor structure comprising:

• a substrate having a top-most surface;
• a dielectric isolation layer formed overlying the substrate;
• a first conductive layer of material having a sidewall and being formed overlying the dielectric isolation layer;
• a second conductive layer of material formed laterally separated from the first conductive layer of material, the second layer of material having a sidewall which faces the sidewall of the first conductive layer of material and being formed overlying the dielectric isolation layer;
• a first air region formed laterally adjacent the sidewall of the first conductive layer of material and overlying the dielectric isolation layer;
• a second air region formed laterally adjacent the sidewall of the second conductive layer of material and overlying the dielectric isolation layer;
• and
• a dielectric region formed in-between the first air region and the second air region where the first air region, second air region, and the dielectric region isolate the first conductive layer of material from the second conductive layer of material, the first air region and the second air region being completely above the top-most surface of the substrate and only dielectric material including the dielectric region being formed between the first air region and the second air region.

A semiconductor structure comprising:

• a base layer;
• a first material, which is resistant to a predetermined selective growth chemistry, formed overlying the base layer;
• a second material, which is not resistant to the predetermined selective growth chemistry, formed overlying the first material;
• a third material, which is resistant to the predetermined selective growth chemistry, formed overlying the second material;
• and
• an opening defined through the first material, second material and third material wherein a fourth material, which is coupled to the second material, closes the opening to form an air region beneath the fourth material.

A semiconductor structure formed on a single substrate comprising:

• a dielectric isolation region overlying the substrate;
• a first conductive region overlying the dielectric isolation region;
• a second conductive region overlying the dielectric isolation region and laterally separated from the first conductive region;
• an enclosed cavity between the first conductive region and the second conductive region, wherein the enclosed cavity has a pressure which is other than atmospheric pressure;
• a solid dielectric layer overlying and in contact with the first conductive region and the second conductive region;
• a layer of material overlying the dielectric layer and overlying a top portion of the enclosed cavity in order to isolate the enclosed cavity from an ambient air environment;
• and
• a dielectric region formed overlying the growth material portion.