US 5,324,683 A · Method of forming a semiconductor structure having an air region

Abstract

A method for forming an air region or an air bridge overlying a base layer (12). Air regions (20a, 20b, 28a, and 48) are formed overlying the base layer (12) to provide for improved dielectric isolation of adjacent conductive layers, provide air-isolated conductive interconnects, and/or form many other microstructures or microdevices. The air regions (20a, 20b, 28a, and 48) are formed by either selectively removing a sacrificial spacer (16a and 16b) or by selectively removing a sacrificial layer (28, 40). The air regions (20a, 20b, 28a, and 48) are sealed, enclosed, or isolated by either a selective growth process or by a non-conformal deposition technique. The air regions (20a, 20b, 28a, and 48) may be formed under any pressure, gas concentration, or processing condition (i.e. temperature, etc.). The air regions (20a, 20b, 28a, and 48) may be formed at any level within an integrated circuit.

Claims36

Dependent claims

A method for forming a semiconductor device having an air region, the method comprising the steps of:

providing a base layer of material;
forming a first conductive element overlying the base layer, the first conductive element having a sidewall;
forming a second conductive element overlying the base layer, the second conductive element having a sidewall and being physically separated from the first conductive element by an opening;
forming a first sidewall spacer having a top portion, the first sidewall spacer being laterally adjacent the sidewall of the first conductive element;
forming a second sidewall spacer having a top portion, the second sidewall spacer being laterally adjacent the sidewall of the second conductive element;
forming a plug layer within the opening between the first conductive element and the second conductive element, the plug layer exposing the top portion of the first sidewall spacer and the top portion of the second sidewall spacer;
and
removing both the first and second sidewall spacers to form the air region between the first conductive element and the second conductive element.

5 more elements

A method for forming a semiconductor device having an air isolation region, the method comprising the steps of:

providing a base layer;
forming a first conductive region overlying the base layer;
forming a second conductive layer overlying the base layer and physically separated from the first conductive region by a separation region;
forming a sacrificial layer of material within the separation region;
forming a first dielectric layer overlying the first conductive region, the second conductive region, and the sacrificial layer;
forming a seed layer overlying the first dielectric layer;
forming an opening through the first dielectric layer and the seed layer to expose a portion of the sacrificial layer, the opening forming a sidewall of the seed layer;
removing the sacrificial layer of material to form the air isolation region between the first conductive region and the second conductive region;
and
growing material from the sidewall of the seed layer to close a portion of the opening and isolate the air isolation region.

7 more elements

Dependencies are inferred from the claim text.

Method of forming a semiconductor structure having an air region

Life of this patent

Method of forming a semiconductor structure having an air region

Life of this patent

Abstract

Claims36