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US 4,068,020 AGranted
Method of depositing elemental amorphous silicon
AssigneeSiemens Aktiengesellschaft
InventorKonrad Reuschel
Life of this patent
Estimating the term…
Abstract
A smooth surfaced amorphous silicon layer useful in semiconductor technology is produced by pyrolytic deposition of elemental silicon onto a heated mandrel along with simultaneous pyrolytic deposition of at least one other element selected from Groups IV through VIII and which is non-semiconductive and does not function as a conductivity determining dopant.
Claims5
A method of producing silicon semiconductor devices composed of amorphous silicon and having at least one pn-junction therein, comprising:
- pyrolytically depositing elemental silicon and a second element selected from the group consisting of, Cr, Fe, Mo, Mn, Ni, Sn, Ti, V and W from a gaseous reaction mixture containing thermally decomposable compounds of silicon and said second element onto a heated carrier member composed of a relatively inert material;
- controlling the deposition temperature and the amount of the second element compound within the gaseous reaction mixture in such a way that the deposited silicon is in an amorphous state and includes therein an amount of said second element which exceeds the solid state solubility of said second element in monocrystalline silicon by at least 5% but which amount is insufficient for formations of the silicides and insufficient to form conductive inclusions within the deposited silicon;
- and
- diffusing a dopant material into the deposited silicon to produce at least one pn-junction therein.
1 more element
A method of producing silicon semiconductor devices composed of amorphous silicon, comprising:
- pyrolytically depositing elemental silicon and a second element selected from the group consisting of S, Ca and Mg from a gaseous reaction mixture containing thermally decomposable compounds of silicon and said second element onto a heated carrier member composed of a relatively inert material;
- and
- controlling the deposition temperature and the amount of the second element compound within the gaseous reaction mixture in such a way that the deposited silicon is in an amorphous state and includes therein an amount of said second element which exceeds the solid state solubility of said second element in monocrystalline silicon by at least 5% but which amount is insufficient for formations of the silicides and insufficient to form conductive inclusions within the deposited silicon.
Dependencies are inferred from the claim text.