Low stress polysilicon microstructures
AssigneeSiemens-Bendix Automotive Electronics L.P.
InventorDuane T. Wilcoxen
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Abstract
Method for relieving stress in silicon microstructures by forming a silicide on the microstructures. Sensors comprising a stress-relieved silicon microstructure are also described.
Claims14
A method of producing a sensor having a free-standing low stress microstructure, said method of forming the microstructure comprising the steps of:
- forming a layer of a metal selected from the group consisting of refractory metal and a noble metal on a substrate of polycrystalline silicon to give a metal-coated silicon layer;
- and
- sintering said metal-coated silicon layer at a temperature not higher than 500.degree. C. in an inert atmosphere to cause formation of stress-relieving metal silicide.
A method of producing a sensor having a free-standing low stress microstructure, said method of forming the microstructure comprising the steps of:
- forming a layer of platinum on a substrate of polycrystalline silicon to give a platinum-coated silicon layer;
- and
- sintering said platinum-coated silicon layer at a temperature of about 250.degree. C. to 400.degree. C. in an inert atmosphere for a period of about 45 to 60 minutes to cause formation of a stress-relieving platinum silicide.
A method according to claim 13, wherein said polycrystalline silicon is formed by low pressure chemical vapor deposition of silicon tetrahydride on said substrate.
Dependencies are inferred from the claim text.