Semiconductor device having cavities with submicrometer dimensions generated by a swelling process

A method for creating structured cavities in a cavity layer of a semiconductor device, which comprises the steps of:

• providing a base layer;
• depositing a working layer formed from a working material at least in sections on the base layer, the working layer being initially in the form of a compact working layer;
• depositing a processing layer on the working layer resulting in a double-layer containing the working layer and the processing layer, the processing layer containing at least one active processing sublayer having a swellable processing material;
• structuring the double-layer resulting in ridges with submicrometer dimensions being formed and with trenches being formed between the ridges, the ridges containing the working material and covered by the swellable processing material;
• providing a processing liquid containing a swelling agent that can be incorporated into the swellable processing material;
• controlling an incorporation of the swelling agent into the swellable processing material, resulting in the swellable processing material of the ridges swelling, and consequently the trenches between adjacent ones of the ridges being covered and defining cavities there beneath;
• and
• removing processing residues from the cavities.