Y10S 148/167
Two diffusions in one hole
Y10S148/167 (Two diffusions in one hole) appears on 18 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 18
- Published applications
- 0
- Assignees
- 13
- Inventors
- 33
- Latest grant
- 24 Mar 1992
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 2 | 0 |
| 1978 | 4 | 0 |
| 1979 | 3 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Fabricating a semiconductor photodetector by annealing to smooth the PN junction24 Mar 1992US 5,098,851 AHitachi, Ltd.
- Method of making a high breakdown active device structure with low series resistance25 Feb 1992US 5,091,336 AHarris Corporation
- Method of producing a metal-oxide semiconductor device22 Jan 1991US 4,987,098 AFuji Electric Co., Ltd.
- Method of fabricating a lateral semiconductor structure including field plates for self-alignment30 Oct 1990US 4,966,858 AMotorola, Inc.
- Insulated gate field effect transistor16 Feb 1982US 4,316,203 AFujitsu Limited
No published applications in this class yet.
Most cited
By later US patents
- Insulated gate field effect transistor109US 4,072,975 ASony Corporation · 1978
- MOSFET transistor and method of fabrication29US 3,986,903 AIntel Corporation · 1976
- Method of fabricating high-gain transistors26US 4,066,473 AFairchild Camera and Instrument Corporation · 1978
- Insulated gate field effect transistor18US 4,316,203 AFujitsu Limited · 1982
- Method of producing a metal-oxide semiconductor device16US 4,987,098 AFuji Electric Co., Ltd. · 1991