Y10S 148/142
Semiconductor-metal-semiconductor
Y10S148/142 (Semiconductor-metal-semiconductor) appears on 12 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 12
- Published applications
- 0
- Assignees
- 9
- Inventors
- 26
- Latest grant
- 21 Apr 1992
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 4 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Vertical transistor device fabricated with semiconductor regrowth21 Apr 1992US 5,106,778 AMassachusetts Institute of Technology
- Semiconductor embedded layer technology utilizing selective epitaxial growth methods16 Jul 1991US 5,032,538 AMassachusetts Institute of Technology
- Method of making metal-insulator-metal junction structures with adjustable barrier heights28 May 1991US 5,019,530 AInternational Business Machines Corporation
- Semiconductor device comprising a perforated metal silicide layer13 Feb 1990US 4,901,121 AAmerican Telephone and Telegraph Company, AT&T Bell Labs
- Method of fabricating a MESFET transistor with gate spaced above source electrode by layer of air or the like3 Oct 1989US 4,871,687 ATelettra-Telefonia Elettronica e Radio S.p.A.
No published applications in this class yet.
Most cited
By later US patents
- Vertical transistor device fabricated with semiconductor regrowth80US 5,106,778 AMassachusetts Institute of Technology · 1992
- Semiconductor embedded layer technology utilizing selective epitaxial growth methods64US 5,032,538 AMassachusetts Institute of Technology · 1991
- Process for producing porous refractory metal layers embedded in semiconductor devices55US 4,758,534 ABell Communications Research, Inc. · 1988
- Method of making metal-insulator-metal junction structures with adjustable barrier heights48US 5,019,530 AInternational Business Machines Corporation · 1991
- Semiconductor device comprising a perforated metal silicide layer44US 4,901,121 AAmerican Telephone and Telegraph Company, AT&T Bell Labs · 1990