Semiconductor embedded layer technology utilizing selective epitaxial growth methods

A method of fabricating integrated circuits including the step of selectively embedding a conductive layer within single crystal semiconductor material comprising:

• providing a first layer of single crystal semiconductor material;
• forming a first pattern, comprising conductive material other than said semiconductor material and from which the semiconductor material will not grow, over the semiconductor crystal layer, the pattern including wide, continuous regions to inhibit further crystal growth and including narrow regions or noncontinuous regions having openings therein to permit further crystal growth;
• growing a second layer of single crystal semiconductor material from the first layer, the crystal growing over and embedding narrow or noncontinuous regions but leaving the wide continuous regions exposed;
• and
• forming a second pattern comprising conductive material over the second layer of semiconductor material, the second pattern having electrical connections with the conductive material of the first pattern at the exposed regions of the first pattern.

A method of selectively embedding a metallic material in a single crystal semiconductor comprising:

• providing a first layer of single crystal semiconductor material;
• forming a pattern comprising metallic material over the first layer of single crystal material, the pattern including wide, continuous regions to inhibit further crystal growth and including narrow regions or noncontinuous regions having openings therein to permit further crystal growth;
• growing a second layer of single crystal semiconductor material from the first layer, the crystal growing over and embedding the narrow or noncontinuous regions but leaving the wide, continuous regions exposed;
• and
• forming a second pattern comprising metallic material over the second layer of semiconductor material, the second pattern having connections with the metallic material of the first pattern at the exposed regions of the first pattern.

A method of isolating a semiconductor device in an integrated circuit comprising:

• providing a single crystal semiconductor substrate;
• forming an isolating layer of material other than that forming the semiconducting substrate onto that substrate and providing openings in the isolating layer;
• growing a semiconducting material from the semiconducting substrate through the openings in the isolating layer and over that layer to embed the isolating layer;
• and
• forming the isolated semiconductor device over the openings in or on the semiconductor material in which the isolating layer is embedded.

A method of embedding a layer of metallic material in a single crystal semiconductor comprising:

• providing a single crystal gallium arsenide substrate;
• providing a metal layer comprising tungsten on the single crystal gallium arsenide substrate with small, uniformly dimensioned and uniformly spaced openings in portions of that metal layer to expose portions of the substrate and without openings in other portions of the metal layer;
• and
• epitaxially growing single crystal gallium arsenide from the exposed portions of the substrate of the metal layer to embed the portions with openings while the portions without openings remain exposed.