Y10S 148/031
Diffusion at an edge
Y10S148/031 (Diffusion at an edge) appears on 16 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 16
- Published applications
- 0
- Assignees
- 13
- Inventors
- 28
- Latest grant
- 3 May 1994
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 6 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Selective sidewall diffusion process using doped SOG3 May 1994US 5,308,790 ANCR Corporation
- Method of making an infrared detector9 Mar 1993US 5,192,695 AFermionics Corporation
- Method of manufacturing a semiconductor device28 Apr 1992US 5,108,944 AKabushiki Kaisha Toshiba
- Fabricating a narrow width EEPROM with single diffusion electrode formation10 Mar 1992US 5,094,968 AAtmel Corporation
- Method of forming buried contact between polysilicon gate and diffusion area12 Nov 1991US 5,064,776 AMicron Technology, Inc.
No published applications in this class yet.
Most cited
By later US patents
- Fabricating a narrow width EEPROM with single diffusion electrode formation36US 5,094,968 AAtmel Corporation · 1992
- Edge doping processes for mesa structures in SOS and SOI devices33US 5,028,564 A1991
- Method of forming buried contact between polysilicon gate and diffusion area23US 5,064,776 AMicron Technology, Inc. · 1991
- Lateral PNP or NPN with a high gain22US 4,196,440 AInternational Business Machines Corporation · 1980
- Method of making an infrared detector19US 5,192,695 AFermionics Corporation · 1993