Selective sidewall diffusion process using doped SOG
AssigneeNCR Corporation
InventorsDerryl D. J. Allman, Gayle W. Miller
Life of this patent
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Abstract
A selective sidewall diffusion process using doped SOG. A substrate is processed to form raised portions or pedestals, having sidewalls, and trenches. A first layer, either a doped SOG layer or undoped oxide layer, may be deposited onto the substrate adjacent the sidewalls. The first layer is densified. A second layer may be deposited on the first layer. The second layer is a doped SOG layer. The second layer is densified and the dopant is driven into the sidewalls to form shallow junctions.
Claims15
A method for doping a sidewall of a raised portion of a semiconductor substrate comprising the steps of:
- depositing an insulating layer only on the substrate adjacent the sidewall, the insulating layer having an end adjacent the sidewall;
- depositing a layer of SOG containing a dopant only on the insulating layer adjacent the sidewall, the doped SOG layer having an end adjacent the sidewall;
- and
- driving the dopant from the SOG layer only into the sidewall to form a junction area at the ends of the insulating layer and the SOG layer, the junction area having a depth less than the length of the sidewall.
A method for doping a sidewall of a raised portion of a semiconductor substrate comprising the steps of:
- depositing an insulating layer only on the substrate adjacent the sidewall, the insulating layer having an end adjacent the sidewall;
- densifying the insulating layer;
- depositing a layer of doped SOG containing a dopant only on the insulating layer adjacent the sidewall, the doped SOG layer having an end adjacent the sidewall;
- densifying the doped SOG layer;
- and
- driving the dopant from the SOG layer only into the sidewall to form a junction area at the ends of the insulating layer and the SOG layer, the junction area having a depth less than the length of the sidewall.
A method for doping a sidewall of a raised portion of a semiconductor substrate comprising the steps of:
- depositing a first doped SOG layer on the substrate;
- depositing a second doped SOG layer on the first SOG layer adjacent the sidewall;
- densifying the first and second doped SOG layers;
- and
- driving the dopants from the first and second SOG layers into the sidewall.
Dependencies are inferred from the claim text.