Y10S 148/146
Sheet resistance, dopant parameters
Y10S148/146 (Sheet resistance, dopant parameters) appears on 5 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 5
- Published applications
- 0
- Assignees
- 2
- Inventors
- 8
- Latest grant
- 26 Nov 1996
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 4 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for determination of resistivity of N-type silicon epitaxial layer26 Nov 1996US 5,578,504 AShin-Etsu Handotai Co., Ltd.
- Semiconductor device having polysilicon resistor with low temperature coefficient10 Sep 1996US 5,554,873 ATexas Instruments Incorporated
- Schottky diode with guard ring23 Jul 1996US 5,539,237 ATexas Instruments Incorporated
- Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient6 Feb 1996US 5,489,547 ATexas Instruments Incorporated
- Method of making schottky diode with guard ring23 May 1995US 5,418,185 ATexas Instruments Incorporated
No published applications in this class yet.
Most cited
By later US patents
- Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient71US 5,489,547 ATexas Instruments Incorporated · 1996
- Semiconductor device having polysilicon resistor with low temperature coefficient33US 5,554,873 ATexas Instruments Incorporated · 1996
- Method of making schottky diode with guard ring21US 5,418,185 ATexas Instruments Incorporated · 1995
- Schottky diode with guard ring14US 5,539,237 ATexas Instruments Incorporated · 1996
- Method for determination of resistivity of N-type silicon epitaxial layer10US 5,578,504 AShin-Etsu Handotai Co., Ltd. · 1996