Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient
AssigneeTexas Instruments Incorporated
InventorsJohn P. Erdeljac, Louis N. Hutter
Life of this patent
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Abstract
A semiconductor device having a p type polysilicon resistor (56) with a moderate sheet resistance and low temperature coefficient of resistance is formed by a double-level polysilicon process. The process also produces n and p-channel transistors (44, 50), a capacitor having upper and lower n type polysilicon capacitor plates (36, 26), an n type polysilicon resistor (32) having a high sheet resistance, and an n type resistor (34) having a low sheet resistance. The p type doping used to form the source/drain regions (48) of p-channel transistor (50) counterdopes n type second level polysilicon to form p type polysilicon resistor (56) without effecting capacitor plates (36, 26) or the n type resistors (32, 34).
Claims12
A method of forming a semiconductor device, comprising the steps of:
- forming a first polysilicon resistor over and insulated from a semiconductor layer, said first polysilicon resistor being of a first conductivity type and having a first temperature coefficient of resistance, said step of forming said first polysilicon resistor including forming a layer of polysilicon over and insulated from said semiconductor layer, doping said layer of polysilicon with a dopant of said first conductivity type, and patterning and etching said layer of polysilicon to define said first polysilicon resistor and to define second and third resistors;
- doping said first polysilicon resistor with a dopant of a second conductivity type opposite said first conductivity type, said step of doping said first polysilicon resistor causing said first polysilicon resistor to be of said second conductivity type and to have a second temperature coefficient of resistance, said second temperature coefficient of resistance being closer to zero than said first temperature coefficient of resistance;
- masking said first polysilicon resistor, a center portion of said second resistor so that end portions of said second resistor adjacent said center portion are exposed, and a first portion of said semiconductor layer, a second portion of said semiconductor layer being exposed;
- doping said third resistor, said end portions of said second resistor, and said second portion of said semiconductor layer with material of said first conductivity type so that said third resistor and said end portions of said second resistor have a sheet resistance less than that of said center portion of said second resistor and at least one region of said first conductivity type is formed in said second portion of said semiconductor layer.
A method of forming a semiconductor device, comprising the steps of:
- forming a first polysilicon resistor over and insulated from a semiconductor layer, said first polysilicon resistor being of a first conductivity type and having a first temperature coefficient of resistance, said step of forming said first polysilicon resistor including forming a layer of polysilicon over and insulated from said semiconductor layer, doping said layer of polysilicon with a dopant of said first conductivity type, and patterning and etching said layer of polysilicon to define said first polysilicon resistor and to define a second polysilicon resistor;
- doping said first polysilicon resistor with a dopant of a second conductivity type opposite said first conductivity type, said step of doping said first polysilicon resistor causing said first polysilicon resistor to be of said second conductivity type and to have a second temperature coefficient of resistance, said second temperature coefficient of resistance being closer to zero than said first temperature coefficient of resistance;
- masking said second polysilicon resistor prior to said step of doping said first polysilicon resistor so that after said step of doping said first polysilicon resistor, said second polysilicon resistor is of said first conductivity type and has a first sheet resistance and said first polysilicon resistor is of said second conductivity type and has a second sheet resistance, said second sheet resistance being less than said first sheet resistance.
Dependencies are inferred from the claim text.