Y10S 148/117
Oxidation, selective
Y10S148/117 (Oxidation, selective) appears on 180 US grants and 1 published applications in this corpus.
Search patents in Y10S- Granted patents
- 180
- Published applications
- 1
- Assignees
- 80
- Inventors
- 310
- Latest grant
- 20 Sep 2005
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 17 | 0 |
| 1977 | 16 | 0 |
| 1978 | 11 | 0 |
| 1979 | 4 | 0 |
| 1980 | 6 | 0 |
| 1981 | 9 | 0 |
| 1982 | 6 | 0 |
| 1983 | 1 | 0 |
| 1984 | 6 | 0 |
| 1985 | 12 | 0 |
| 1986 | 7 | 0 |
| 1987 | 7 | 0 |
| 1988 | 2 | 0 |
| 1989 | 8 | 0 |
| 1990 | 7 | 0 |
| 1991 | 7 | 0 |
| 1992 | 5 | 0 |
| 1993 | 13 | 0 |
| 1994 | 12 | 0 |
| 1995 | 3 | 0 |
| 1996 | 6 | 0 |
| 1997 | 6 | 0 |
| 1998 | 1 | 0 |
| 1999 | 4 | 0 |
| 2000 | 3 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for creating a stepped structure on a substrate20 Sep 2005US 6,946,339 B2Infineon Technologies AG
- Method of making spin valve read head with plasma produced metal oxide insulation layer between lead and shield layers19 Dec 2000US 6,162,305 AInternational Business Machines Corporation
- Method for poly-buffered locos without pitting formation1 Aug 2000US 6,096,613 AAcer Semiconductor Manufacturing Inc.
- Method of fabricating integrated circuits with oxidized isolation25 Jul 2000US 6,093,620 ANational Semiconductor Corporation
- Spin valve read head with plasma produced metal oxide insulation layer between lead and shield layers and method of making7 Dec 1999US 5,999,379 AInternational Business Machines Corporation
Most cited
By later US patents
- Method for forming a field-effect transistor including anodic oxidation of the gate207US 5,521,107 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Method for forming a high voltage gate dielectric for use in integrated circuit137US 5,861,347 AMotorola, Inc. · 1999
- Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers135US 4,663,831 AMotorola, Inc. · 1987
- Method of manufacturing semiconductor device by forming first and second oxide films by use of nitridation132US 5,254,489 ANEC Corporation · 1993
- Process for manufacturing semiconductor devices115US 5,336,638 AHitachi, Ltd. · 1994