Process for manufacturing semiconductor devices
AssigneeHitachi, Ltd.
InventorsMasayuki Suzuki, Ryo Haruta, Hiroshi Shinriki, Masayuki Nakata
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Abstract
Herein disclosed is a process for manufacturing a semiconductor device, which comprises: a step of forming a first electrode composed of tantalum and tungsten over a semiconductor substrate; a step of depositing a dielectric film of tantalum oxide on the first electrode; a step of oxidizing the first electrode and the dielectric film of tantalum oxide; and a step of forming a second electrode over the dielectric film.
Claims29
A process for manufacturing a semiconductor device, comprising:
- (a) a step of forming a first electrode comprised of a first film of a mixture of first and second metals over a semiconductor substrate;
- (b) a step of depositing a dielectric film made of an oxide film of said first metal on said first electrode;
- (c) a step of oxidizing said first electrode and said dielectric film in an oxidizing atmosphere such that said first metal is oxidized and said second metal is not oxidized;
- and
- (d) a step of forming a second electrode over said dielectric film.
A process for manufacturing a semiconductor device, comprising:
- (a) a step of forming a first electrode comprised of a first film of a mixture of first and second metals over a semiconductor substrate;
- (b) a step of forming a dielectric film of an oxide film of said first metal by oxidizing said first electrode in such an atmosphere, containing H.sub.2 O and H.sub.2, such that said first metal is oxidized and said second metal is not oxidized;
- and
- (c) a step of forming a second electrode over said dielectric film.
A process for manufacturing a semiconductor device according to claim, 8 wherein said first metal is Ta whereas said second metal is W.
A process for manufacturing a semiconductor device, comprising:
- (a) a step of forming a MISFET having a source, a drain and a gate electrode over the surface of a semiconductor substrate;
- (b) a step of forming a first electrode connected electrically with one of the source and drain of said MISFET and including a first film of a mixture of a first metal and a second metal;
- (c) a step of depositing a dielectric film formed of an oxide film of said first metal over said first electrode;
- (d) a step of oxidizing said first electrode and said dielectric film in an atmosphere such that said first metal is oxidized and said second metal is not oxidized;
- and
- (e) a step of forming a second electrode over said dielectric film.
Dependencies are inferred from the claim text.