Y10S 148/144
Shallow diffusion
Y10S148/144 (Shallow diffusion) appears on 14 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 14
- Published applications
- 0
- Assignees
- 11
- Inventors
- 37
- Latest grant
- 20 Jul 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 4 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of producing a bipolar transistor20 Jul 1999US 5,925,574 ASeiko Instruments Inc.
- Method of damage free doping for forming a dram memory cell5 May 1998US 5,747,378 AMosel Vitelic, Inc.
- Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device7 Oct 1997US 5,674,777 ANational Science Council
- Process for reducing transient diffusion of dopant atoms23 Sep 1997US 5,670,391 ALucent Technologies Inc.
- Method for fabricating MOS transistor utilizing doped disposable layer4 Feb 1997US 5,599,734 ALG Semicon Co., Ltd.
No published applications in this class yet.
Most cited
By later US patents
- Method of manufacturing semiconductor device124US 5,227,329 AHitachi, Ltd. · 1993
- Method of producing a bipolar transistor70US 5,925,574 ASeiko Instruments Inc. · 1999
- Method for low energy implantation of argon to control titanium silicide formation42US 5,444,024 AAdvanced Micro Devices, Inc. · 1995
- Method of making a diffused lightly doped drain device with built in etch stop26US 5,518,945 AInternational Business Machines Corporation · 1996
- Method of forming shallow junctions22US 5,183,777 AFujitsu Limited · 1993