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US 5,670,391 AGranted
Process for reducing transient diffusion of dopant atoms
AssigneeLucent Technologies Inc.
InventorsDesmond R. Lim, Conor Stefan Rafferty
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Abstract
Transient enhanced diffusion (TED) of dopants is reduced by bring the surface closer to the implant damage prior to the annealing process.
Claims8
A process for reducing the transient enhanced diffusion of ion-implanted impurity atoms comprising the steps of:
- implanting a region of a semiconductor material with a dose of impurity atoms having an average depth (R.sub.p) within the semiconductor material;
- removing an amount of a surface of the region, the amount is between about 10% of R.sub.p to R.sub.p ;
- and
- annealing said semiconductor material to remove damage caused by implanting step.
1 more element
Dependencies are inferred from the claim text.