Method of manufacturing semiconductor device
AssigneeHitachi, Ltd.
InventorsTakashi Kobayashi, Shimpei Iijima, Atsushi Hiraiwa, Nobuyoshi Kobayashi, Takashi Hashimoto, Mitsuo Nanba
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Abstract
A boron doped amorphous silicon film is formed by CVD under the conditions of a pressure lower than 1 atm and a temperature higher than 200.degree. C. and lower than 400.degree. C. by using at least one of disilane and trisilane, and diborane as source gases. Since the resultant amorphous silicon film can diffuse impurities at a lower temperature than in the case of the polycrystalline silicon film formed by the conventional method, a pn junction much shallower than in the prior art can be formed.
Claims12
A method of manufacturing a semiconductor device having electrodes or wirings with excellent step coverage and having a shallow p-type region, comprising steps of introducing at least one of disilane and trisilane, and diborane into a reaction vessel, forming a boron doped amorphous silicon film covering the exposed surface of a semiconductor substrate placed in said reaction vessel by chemical vapor deposition under conditions including a pressure lower than 1 atm and a temperature higher than 200.degree. C. and lower than 400.degree. C., and applying a heat treatment to effect diffusion of the boron from said amorphous silicon film into said semiconductor substrate through said exposed surface thereby forming a shallow p-type region in a surface region of said semiconductor substrate.
A method of manufacturing a semiconductor device having electrodes or wirings with excellent step coverage, comprising steps of introducing at least one of disilane and trisilane, and diborane into a reaction vessel and forming a boron doped amorphous silicon film on a surface of a semiconductor substrate placed in said reaction vessel by chemical vapor deposition under the conditions including a pressure lower than 1 atm and a temperature higher than 200.degree. C. and lower than 400.degree. C., wherein the boron doped amorphous silicon film is formed in the opening of a dielectric film formed on the semiconductor substrate and said amorphous silicon in said opening is substituted by tungsten.
Dependencies are inferred from the claim text.