Y10S 148/103
Mask, dual function
Official title: Mask, dual function, e.g. diffusion and oxidation
Y10S148/103 (Mask, dual function) appears on 33 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 33
- Published applications
- 0
- Assignees
- 23
- Inventors
- 57
- Latest grant
- 14 Oct 1997
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 0 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 7 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of producing sheets of crystalline material and devices made therefrom14 Oct 1997US 5,676,752 AMassachusetts Institute of Technology
- Method of manufacturing a semiconductor device having a self-aligned structure for a split gate flash memory device7 Oct 1997US 5,674,767 ALG Semicon Co., Ltd.
- Method for fabricating a short channel trenched DMOS transistor12 Dec 1995US 5,474,943 ASiliconix Incorporated
- Method of producing sheets of crystalline material and devices made therefrom8 Nov 1994US 5,362,682 AMassachusetts Institute of Technology
- Short channel trenched DMOS transistor23 Aug 1994US 5,341,011 ASiliconix Incorporated
No published applications in this class yet.
Most cited
By later US patents
- Method for fabricating a short channel trenched DMOS transistor110US 5,474,943 ASiliconix Incorporated · 1995
- Semiconductor device and process for manufacturing the same103US 4,557,036 ANippon Telegraph & Telephone Public Corporation · 1985
- Single mask process for forming both n-type and p-type gates in a polycrystalline silicon layer during the formation of a semiconductor device94US 5,278,085 AMicron Semiconductor, Inc. · 1994
- Method for manufacturing a semiconductor field effort transistor74US 3,967,981 A1976
- Method of manufacturing a DMOS66US 4,879,254 ANippondenso Co., Ltd. · 1989