Method of producing sheets of crystalline material and devices made therefrom
AssigneeMassachusetts Institute of Technology
InventorsCarl O. Bozler, John C. C. Fan, Robert W. McClelland
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Abstract
A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
Claims18
A method of producing an integrated circuit with a silicon thin-film comprising:
- forming an insulating layer on a substrate;
- forming a silicon thin-film over the substrate and the insulating layer;
- and
- transferring the silicon thin-film from the substrate onto an optically transmitting substrate, the transferring step including attaching the silicon thin-film to the optically transmitting substrate with an epoxy adhesive layer and separating the substrate from the insulating layer and the silicon thin-film;
- said method further comprising the step of at least partially fabricating an integrated circuit with the silicon thin-film during or after the step of forming the silicon thin-film and thereafter completing integrated circuit fabrication such that the integrated circuit is attached to the optically transmitting substrate with the epoxy adhesive layer.
A method of producing thin-films of substantially single crystal semiconductor material comprising:
- forming an insulating layer on a substrate;
- forming a non-single crystal semiconductor material on the insulating layer;
- heating the non-single crystal material with a scanning heat source to crystallize the material and forming a thin-film of substantially single crystal semiconductor material;
- and
- transferring the thin-film semiconductor material from the substrate onto an optically transmitting substrate, the transferring step including attaching the silicon thin-film to the optically transmitting substrate with an epoxy adhesive layer and separating the substrate from the thin-film semiconductor material said method further comprising the step of at least partially fabricating an integrated circuit with the thin-film semiconductor material during or after the step of forming the thin-film of substantially single crystal semiconductor material and thereafter completing integrated circuit fabrication.
A method of producing an integrated circuit device in a silicon thin-film comprising:
- forming a silicon dioxide insulating layer on a substrate;
- forming a thin-film silicon layer over the substrate and the silicon dioxide insulating layer;
- and
- transferring the silicon thin-film from the substrate onto an optically transmitting substrate, the transferring step including attaching the silicon thin-film to the optically transmitting substrate with an epoxy adhesive layer and removing the substrate from the insulating layer and the silicon thin-film, said method further comprising the step of at least partially fabricating an integrated circuit with the silicon thin-film during or after the step of forming the silicon-thin-film and thereafter completing integrated circuit fabrication.
Dependencies are inferred from the claim text.