Y10S 148/057
Gas flow control
Y10S148/057 (Gas flow control) appears on 28 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 28
- Published applications
- 0
- Assignees
- 22
- Inventors
- 67
- Latest grant
- 22 Mar 1994
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 1 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 8 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Compound semiconductor crystal growing method22 Mar 1994US 5,296,088 AFujitsu Limited
- Semiconductor growth process19 Jan 1993US 5,180,684 AFujitsu Limited
- Method of manufacturing a p-type compound semiconductor thin film containing a III-group element and a v-group element by metal organics chemical vapor deposition1 Dec 1992US 5,168,077 AKabushiki Kaisha Toshiba
- MOCVD method and apparatus21 Apr 1992US 5,106,453 AAT&T Bell Laboratories
- Method for selectively depositing single elemental semiconductor material on substrates6 Aug 1991US 5,037,775 AMcnc
No published applications in this class yet.
Most cited
By later US patents
- Vapor phase growth on semiconductor wafers128US 4,745,088 AHitachi, Ltd. · 1988
- Selective OMCVD growth of compound semiconductor materials on silicon substrates107US 4,826,784 AKopin Corporation · 1989
- Vapor deposition of single crystal gallium nitride69US 4,144,116 AU. S. Philips Corporation · 1979
- Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy67US 4,859,625 AResearch Development Corporation of Japan, Junichi Nishizawa and Oki Electric Industry Co., Ltd. · 1989
- Method for selectively depositing single elemental semiconductor material on substrates52US 5,037,775 AMcnc · 1991